thermocompression bonding

In this paper we reported the process and principle of large-area GaAs epitaxial plate thermocompression bonded to K4 window-glass technology, and emphatically discussed the effects of the deposition of SiN film, the controlling of bonding temperature and the choice of pressure on bonding quality.

本文报道制备GaAs透射式光阴极过程中窗玻璃与大面积GaAs外延片热压粘结工艺的原理和过程，并重点分析抗反射膜的淀积、粘结温度控制和压力大小对粘结结果的影响。

A Novel Instrument of Thermocompression Wire Bonding

一种硅芯片外引线键合的热压焊简易装置

The thermocompression wire bonding strength was tested with bonding tester. The strength was over 0.17 N.

使用接合强度测试仪对压焊键合点强度进行了拉断试验，测得键合强度拉断力都在0.17N之上。

In piezoresistive pressure sensor packaging process, the thermocompression wire bonding was studied to meet the outer interconnection of silicon gauge.

为满足压阻式压力传感器封装工艺中硅芯片外引线键合的要求，研制了热压焊简易装置；

Section 13. 3 covers the thermocompression bonding process itself and also tape automated bonding.

13.3节的内容既涉及热压连接工艺本身，也涉及了自动连接的传送带技术。

The technological processes of thermocompression bonding and adhesion are introduced to combine the F46 film with the nickel plating leaded brass sheet.

介绍了用热合和粘接两种方法实现驻极体F46薄膜与镀镍铅黄铜金属片接合的工艺过程。